(China (Mainland))
Product Summary
The IXFB72N55Q2 is a HiPerFET Power MOSFET. The applications of it are DC-DC converters, Switched-mode and resonant-mode, power supplies, >500kHz switching, DC choppers, Pulse generation, Laser drivers.
Parametrics
IXFB72N55Q2 absolute maximum ratings: (1)VDSS:550V; (2)VDGR:550V; (3)VGS:±30V; (4)VGSM:±40V; (5)ID25:72A; (6)IDM:284A; (7)IAR:72A; (8)EAR:6.0mJ; (9)EAS:5.0J; (10)dv/dt:20V/ns; (11)PD:890W; (12)Tj:-55 to +150℃; (13)Tjm:150℃; (14)Tstg:-55 to +150℃; (15)Tl:300℃.
Features
IXFB72N55Q2 features: (1)Double metal process for low gate resistance; (2)Unclamped Inductive Switching (UIS) rated; (3)Low package inductance:easy to drive and to protect; (4)Fast intrinsic rectifier.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXFB72N55Q2 |
Ixys |
MOSFET 72 Amps 550V 0.07 Rds |
Data Sheet |
Negotiable |
|
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Pricing (USD) |
Quantity | ||||
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Data Sheet |
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Ixys |
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Data Sheet |
Negotiable |
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Ixys |
MOSFET POLAR PWR MOSFET 100V, 300A |
Data Sheet |
Negotiable |
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IXFB30N120P |
Ixys |
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Data Sheet |
Negotiable |
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|
IXFB30N120Q2 |
Ixys |
MOSFET 30 Amps 1200V 0.38 Rds |
Data Sheet |
Negotiable |
|
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